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Self-assembly of oxide monolayers by wet chemistry for microelectronic applications.

Freiman, Gabriel (2006) Self-assembly of oxide monolayers by wet chemistry for microelectronic applications. PhD thesis PMC, EP - PMC, EP/X p.175.

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Alternative Locations: http://www.imprimerie.polytechnique.fr/Theses/Files/Freiman.pdf

Abstract

Self-assembly chemistry offers a good method to obtain dense and high quality oxide films for dielectric applications as well as hybrid systems. Using a laboratory built automate in a controlled atmosphere of nitrogen, a silicon wafer was alternatively dipped in different dilute solutions of alkoxides, phosphoric acid and water (hydrolysis). Each sequence was followed by rinsing in ethanol in order to graft one monolayer only and in water to activate the substrate for the following cycle. A better control of the film density as compared to the classical sol-gel method was obtained by working w!
ith very dilute solutions (< 10-3 mol / L) and low!
withdra
wal speed (< 2 cm/min.). Bidimensional titanium (or zirconium) phosphates, artificial sequences of alternate oxide layers of (ZrO2)n and luminescent lanthanum phosphate europium (Eu3+) doped compounds have been synthesized on silicon by this self-assembly method.

Item Type:PhD Thesis (PhD)
Thesis Supervisor:Barboux, Philippe
Date:15 December 2006
Board of examiners:Decher, Gero and Gaucher, Philippe and Halimaoui, Aomar and Langlet, Michel and Ozanam, François
Ecole Doctorale:ED 447 ECOLE DOCTORALE DE L'ECOLE POLYTECHNIQUE
Discipline:PMC
Collection (Fonds):EP/X
Institution:EP/X
Department:EP - PMC
Subjects:3. Physics, Optics
Uncontrolled Keywords:Oxide, Monolayer, Layer-by-layer, High-k, Mosfet, Oxyde, Monocouche, Dépôt séquentiel, High-k, Mosfet
ID Code:2566
Deposited By:Laurence Vidament
Deposited On:25 June 2007

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